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2SA1162S-GR,LF(DToshiba Semiconductor and Storage TRANS PNP 50V 0.15A SMINI
Part Number2SA1162S-GR,LF(D
PackageTO-236-3, SC-59, SOT-23-3
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-2SA1162S-GR,LF(D
DescriptionTRANS PNP 50V 0.15A SMINI
In stock3920
Data sheet
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  • Specifications
  • Product Details - 2SA1162S-GR,LF(D
  • 2SA1162S-GR,LF(D Tech Specifications
    Toshiba Semiconductor and Storage - 2SA1162S-GR,LF(D technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - 2SA1162S-GR,LF(D
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50 V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
    Transistor Type PNP
    Supplier Device Package S-Mini
    Series -
    Power - Max 150 mW
    Package / Case TO-236-3, SC-59, SOT-23-3
    Package Tape & Reel (TR)
    Operating Temperature 125°C (TJ)
    Mounting Type Surface Mount
    Frequency - Transition 80MHz
    DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Current - Collector (Ic) (Max) 150 mA
    Base Product Number 2SA1162
  • The2SA1162S-GR,LF(Dis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS PNP 50V 0.15A SMINI and it falls under the category of Transistors - Bipolar (BJT) - Single, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50 V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 10mA, 100mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for 2SA1162S-GR,LF(D or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute 2SA1162S-Y, LF(D 2SA1162-GR,LXHF 2SA1162-GR,LF 2SA1163-GR,LF
Part Number 2SA1162S-Y, LF(D 2SA1162-GR,LXHF 2SA1162-GR,LF 2SA1163-GR,LF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Current - Collector (Ic) (Max) - - - -
Package / Case - - - -
Operating Temperature - - - -
Transistor Type - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Current - Collector Cutoff (Max) - - - -
Power - Max - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Frequency - Transition - - - -
Series - * * *
Package - Bulk Bulk Bulk
Supplier Device Package - - - -
Mounting Type - - - -
Base Product Number - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
  • Toshiba Semiconductor and Storage Related Products
  • 2SA1162S-GR,LF(D Download Datasheets (0)

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