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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN1108CT(TPL3)
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RN1108CT(TPL3)Toshiba Semiconductor and Storage TRANS PREBIAS NPN 20V 0.05A CST3
Part NumberRN1108CT(TPL3)
PackageSC-101, SOT-883
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-RN1108CT(TPL3)
DescriptionTRANS PREBIAS NPN 20V 0.05A CST3
In stock4573
Data sheet
1.RN1108CT(TPL3).pdf 2.RN1108CT(TPL3).pdf
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  • Specifications
  • Product Details - RN1108CT(TPL3)
  • RN1108CT(TPL3) Tech Specifications
    Toshiba Semiconductor and Storage - RN1108CT(TPL3) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN1108CT(TPL3)
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 20 V
    Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
    Transistor Type NPN - Pre-Biased
    Supplier Device Package CST3
    Series -
    Resistor - Emitter Base (R2) 47 kOhms
    Resistor - Base (R1) 22 kOhms
    Power - Max 50 mW
    Package / Case SC-101, SOT-883
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 5V
    Current - Collector Cutoff (Max) 500nA
    Current - Collector (Ic) (Max) 50 mA
    Base Product Number RN1108
  • TheRN1108CT(TPL3)is a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS PREBIAS NPN 20V 0.05A CST3 and it falls under the category of Transistors - Bipolar (BJT) - Single, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 20 V and Vce Saturation (Max) @ Ib, Ic of 150mV @ 250µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN1108CT(TPL3) or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN1108ACT(TPL3) RN1107ACT(TPL3) RN1107CT(TPL3) RN1109ACT(TPL3)
Part Number RN1108ACT(TPL3) RN1107ACT(TPL3) RN1107CT(TPL3) RN1109ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Current - Collector (Ic) (Max) - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Power - Max - - - -
Resistor - Emitter Base (R2) - - - -
Package / Case - - - -
Resistor - Base (R1) - - - -
Transistor Type - - - -
Package - Bulk Bulk Bulk
Supplier Device Package - - - -
Mounting Type - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Current - Collector Cutoff (Max) - - - -
Series - * * *
Base Product Number - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN1108CT(TPL3) Download Datasheets (2)

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