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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN1310,LF
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RN1310,LFToshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1A USM
Part NumberRN1310,LF
PackageSC-70, SOT-323
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-RN1310,LF
DescriptionTRANS PREBIAS NPN 50V 0.1A USM
In stock535722
Data sheet
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  • Specifications
  • Product Details - RN1310,LF
  • RN1310,LF Tech Specifications
    Toshiba Semiconductor and Storage - RN1310,LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN1310,LF
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50 V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Transistor Type NPN - Pre-Biased
    Supplier Device Package SC-70
    Series -
    Resistor - Base (R1) 4.7 kOhms
    Power - Max 100 mW
    Package / Case SC-70, SOT-323
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    Frequency - Transition 250 MHz
    DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Current - Collector (Ic) (Max) 100 mA
    Base Product Number RN1310
  • TheRN1310,LFis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS PREBIAS NPN 50V 0.1A USM and it falls under the category of Transistors - Bipolar (BJT) - Single, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50 V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 250µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN1310,LF or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN1310,LXHF RN1313,LXHF RN1306,LF RN1307,LXHF
Part Number RN1310,LXHF RN1313,LXHF RN1306,LF RN1307,LXHF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Supplier Device Package - - - -
Power - Max - - - -
Current - Collector (Ic) (Max) - - - -
Frequency - Transition - - - -
Transistor Type - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Current - Collector Cutoff (Max) - - - -
Resistor - Base (R1) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Mounting Type - - - -
Base Product Number - - - -
Package / Case - - - -
Series - * * *
Voltage - Collector Emitter Breakdown (Max) - - - -
Package - Bulk Bulk Bulk
  • Toshiba Semiconductor and Storage Related Products
  • RN1310,LF Download Datasheets (0)

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