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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN2316(TE85L,F)
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RN2316(TE85L,F)Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
Part NumberRN2316(TE85L,F)
PackageSC-70, SOT-323
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs StatusLead free / RoHS Compliant
Manufacturer Part NumberToshiba Semiconductor and Storage-RN2316(TE85L,F)
DescriptionTRANS PREBIAS PNP 0.1W USM
In stock684458
Data sheet
RN2316(TE85L,F).pdf
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  • Specifications
  • Product Details - RN2316(TE85L,F)
  • RN2316(TE85L,F) Tech Specifications
    Toshiba Semiconductor and Storage - RN2316(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN2316(TE85L,F)
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Transistor Type PNP - Pre-Biased
    Supplier Device Package USM
    Series -
    Resistor - Emitter Base (R2) 10 kOhms
    Resistor - Base (R1) 4.7 kOhms
    Power - Max 100mW
    Packaging Tape & Reel (TR)
    Package / Case SC-70, SOT-323
    Other Names RN2316(TE85LF)
    RN2316(TE85LF)-ND
    RN2316(TE85LF)TR
    RN2316TE85LF
    Mounting Type Surface Mount
    Moisture Sensitivity Level (MSL) 1 (Unlimited)
    Manufacturer Standard Lead Time 16 Weeks
    Lead Free Status / RoHS Status Lead free / RoHS Compliant
    Frequency - Transition 200MHz
    Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
    DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
    Current - Collector Cutoff (Max) 500nA
    Current - Collector (Ic) (Max) 100mA
    Base Part Number RN231*
  • TheRN2316(TE85L,F)is a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS PREBIAS PNP 0.1W USM and it falls under the category of Transistors - Bipolar (BJT) - Single, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 250µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN2316(TE85L,F) or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN2312(TE85L,F) RN2311(TE85L,F) RN2318(TE85L,F) RN2313(TE85L,F)
Part Number RN2312(TE85L,F) RN2311(TE85L,F) RN2318(TE85L,F) RN2313(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Resistor - Base (R1) - - - -
Supplier Device Package - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Current - Collector (Ic) (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Manufacturer Standard Lead Time - - - -
Packaging - - - -
Other Names - - - -
Power - Max - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Mounting Type - - - -
Resistor - Emitter Base (R2) - - - -
Lead Free Status / RoHS Status - - - -
Series - * * *
Base Part Number - - - -
Current - Collector Cutoff (Max) - - - -
Detailed Description - - - -
Moisture Sensitivity Level (MSL) - - - -
Package / Case - - - -
Transistor Type - - - -
Frequency - Transition - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN2316(TE85L,F) Download Datasheets (1)

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