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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN2103MFV,L3F
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RN2103MFV,L3FToshiba Semiconductor and Storage TRANS PREBIAS PNP 50V 0.1A VESM
Part NumberRN2103MFV,L3F
PackageSOT-723
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs StatusRoHS Compliant
Manufacturer Part NumberToshiba Semiconductor and Storage-RN2103MFV,L3F
DescriptionTRANS PREBIAS PNP 50V 0.1A VESM
In stock4334
Data sheet
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  • Specifications
  • Product Details - RN2103MFV,L3F
  • RN2103MFV,L3F Tech Specifications
    Toshiba Semiconductor and Storage - RN2103MFV,L3F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN2103MFV,L3F
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50 V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
    Transistor Type PNP - Pre-Biased
    Supplier Device Package VESM
    Series -
    Resistor - Emitter Base (R2) 22 kOhms
    Resistor - Base (R1) 22 kOhms
    Power - Max 150 mW
    Package / Case SOT-723
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Current - Collector (Ic) (Max) 100 mA
    Base Product Number RN2103
  • TheRN2103MFV,L3Fis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS PREBIAS PNP 50V 0.1A VESM and it falls under the category of Transistors - Bipolar (BJT) - Single, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50 V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 500µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN2103MFV,L3F or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN2103MFV,L3F(CT RN2103MFV,L3XHF(CT RN2104MFV,L3F RN2102MFV,L3XHF(CT
Part Number RN2103MFV,L3F(CT RN2103MFV,L3XHF(CT RN2104MFV,L3F RN2102MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Power - Max - - - -
Series - * * *
Voltage - Collector Emitter Breakdown (Max) - - - -
Current - Collector Cutoff (Max) - - - -
Package - Bulk Bulk Bulk
Vce Saturation (Max) @ Ib, Ic - - - -
Current - Collector (Ic) (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Supplier Device Package - - - -
Base Product Number - - - -
Resistor - Base (R1) - - - -
Package / Case - - - -
Mounting Type - - - -
Resistor - Emitter Base (R2) - - - -
Transistor Type - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN2103MFV,L3F Download Datasheets (0)

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