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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN2103MFV,L3XHF(CT
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RN2103MFV,L3XHF(CTToshiba Semiconductor and Storage AUTO AEC-Q PNP Q1BSR=22K, Q1BER=
Part NumberRN2103MFV,L3XHF(CT
PackageSOT-723
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-RN2103MFV,L3XHF(CT
DescriptionAUTO AEC-Q PNP Q1BSR=22K, Q1BER=
In stock302059
Data sheet
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  • Specifications
  • Product Details - RN2103MFV,L3XHF(CT
  • RN2103MFV,L3XHF(CT Tech Specifications
    Toshiba Semiconductor and Storage - RN2103MFV,L3XHF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN2103MFV,L3XHF(CT
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50 V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
    Transistor Type PNP - Pre-Biased
    Supplier Device Package VESM
    Series Automotive, AEC-Q101
    Resistor - Emitter Base (R2) 22 kOhms
    Resistor - Base (R1) 22 kOhms
    Power - Max 150 mW
    Package / Case SOT-723
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    Frequency - Transition 250 MHz
    DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
    Current - Collector Cutoff (Max) 500nA
    Current - Collector (Ic) (Max) 100 mA
    Base Product Number RN2103
  • TheRN2103MFV,L3XHF(CTis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is AUTO AEC-Q PNP Q1BSR=22K, Q1BER= and it falls under the category of Transistors - Bipolar (BJT) - Single, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50 V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 500µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN2103MFV,L3XHF(CT or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN2104MFV,L3XHF(CT RN2102MFV,L3XHF(CT RN2103MFV,L3F(CT RN2102MFV,L3F(CT
Part Number RN2104MFV,L3XHF(CT RN2102MFV,L3XHF(CT RN2103MFV,L3F(CT RN2102MFV,L3F(CT
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Base Product Number - - - -
Series - * * *
Supplier Device Package - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Package / Case - - - -
Transistor Type - - - -
Current - Collector Cutoff (Max) - - - -
Package - Bulk Bulk Bulk
Resistor - Emitter Base (R2) - - - -
Power - Max - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Mounting Type - - - -
Frequency - Transition - - - -
Current - Collector (Ic) (Max) - - - -
Resistor - Base (R1) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN2103MFV,L3XHF(CT Download Datasheets (0)

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