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2SK3309(Q)Toshiba Semiconductor and Storage MOSFET N-CH 450V 10A TO220FL
Part Number2SK3309(Q)
PackageTO-220-3, Short Tab
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-2SK3309(Q)
DescriptionMOSFET N-CH 450V 10A TO220FL
In stock3526
Data sheet
1.2SK3309(Q).pdf 2.2SK3309(Q).pdf
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  • Specifications
  • Product Details - 2SK3309(Q)
  • 2SK3309(Q) Tech Specifications
    Toshiba Semiconductor and Storage - 2SK3309(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - 2SK3309(Q)
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Vgs(th) (Max) @ Id 5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220FL
    Series -
    Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
    Power Dissipation (Max) 65W (Tc)
    Package / Case TO-220-3, Short Tab
    Package Tube
    Operating Temperature 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 10 V
    Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 450 V
    Current - Continuous Drain (Id) @ 25°C 10A (Ta)
    Base Product Number 2SK3309
  • The2SK3309(Q)is a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 450V 10A TO220FL and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Vgs(th) (Max) @ Id of 5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for 2SK3309(Q) or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute 2SK3309(TE24L,Q) 2SK3403(Q) 2SK3342(TE16L1,NQ) 2SK3132(Q)
Part Number 2SK3309(TE24L,Q) 2SK3403(Q) 2SK3342(TE16L1,NQ) 2SK3132(Q)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss) - - - -
Vgs(th) (Max) @ Id - - - -
Package / Case - - - -
Vgs (Max) - - - -
Technology - - - -
Package - Bulk Bulk Bulk
Power Dissipation (Max) - - - -
FET Type - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Rds On (Max) @ Id, Vgs - - - -
Operating Temperature - - - -
Base Product Number - - - -
Series - * * *
FET Feature - - - -
Supplier Device Package - - - -
Mounting Type - - - -
  • Toshiba Semiconductor and Storage Related Products
  • 2SK3309(Q) Download Datasheets (2)

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