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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedRN1973(TE85L,F)
Toshiba Semiconductor and Storage
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RN1973(TE85L,F)Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
Part NumberRN1973(TE85L,F)
Package6-TSSOP, SC-88, SOT-363
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs StatusRoHS Compliant
Manufacturer Part NumberToshiba Semiconductor and Storage-RN1973(TE85L,F)
DescriptionTRANS 2NPN PREBIAS 0.2W US6
In stock257750
Data sheet
RN1973(TE85L,F).pdf
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  • Specifications
  • Product Details - RN1973(TE85L,F)
  • RN1973(TE85L,F) Tech Specifications
    Toshiba Semiconductor and Storage - RN1973(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN1973(TE85L,F)
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Transistor Type 2 NPN - Pre-Biased (Dual)
    Supplier Device Package US6
    Series -
    Resistor - Emitter Base (R2) -
    Resistor - Base (R1) 47kOhms
    Power - Max 200mW
    Package / Case 6-TSSOP, SC-88, SOT-363
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    Frequency - Transition -
    DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Current - Collector (Ic) (Max) 100mA
    Base Product Number RN1973
  • TheRN1973(TE85L,F)is a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS 2NPN PREBIAS 0.2W US6 and it falls under the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 250µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN1973(TE85L,F) or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN1963(TE85L,F) RN1963FE(TE85L,F) RN1970FE(TE85L,F) RN1967FE(TE85L,F)
Part Number RN1963(TE85L,F) RN1963FE(TE85L,F) RN1970FE(TE85L,F) RN1967FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Package - Bulk Bulk Bulk
Transistor Type - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Supplier Device Package - - - -
Resistor - Emitter Base (R2) - - - -
Power - Max - - - -
Base Product Number - - - -
Current - Collector (Ic) (Max) - - - -
Series - * * *
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Package / Case - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Frequency - Transition - - - -
Current - Collector Cutoff (Max) - - - -
Mounting Type - - - -
Resistor - Base (R1) - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN1973(TE85L,F) Download Datasheets (1)

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