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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleTK10A60E,S4X
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TK10A60E,S4XToshiba Semiconductor and Storage MOSFET N-CH 600V TO220SIS
Part NumberTK10A60E,S4X
PackageTO-220-3 Full Pack
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs StatusLead free / RoHS Compliant
Manufacturer Part NumberToshiba Semiconductor and Storage-TK10A60E,S4X
DescriptionMOSFET N-CH 600V TO220SIS
In stock19008
Data sheet
TK10A60E,S4X.pdf
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  • Specifications
  • Product Details - TK10A60E,S4X
  • TK10A60E,S4X Tech Specifications
    Toshiba Semiconductor and Storage - TK10A60E,S4X technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - TK10A60E,S4X
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Vgs(th) (Max) @ Id 4V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220SIS
    Series -
    Rds On (Max) @ Id, Vgs 750 mOhm @ 5A, 10V
    Power Dissipation (Max) 45W (Tc)
    Packaging Tube
    Package / Case TO-220-3 Full Pack
    Other Names TK10A60E,S4X(S
    TK10A60E,S5X
    TK10A60E,S5X(M
    TK10A60ES4X
    TK10A60ES4X(S
    TK10A60ES4X(S-ND
    TK10A60ES5X
    TK10A60ES5X-ND
    Operating Temperature 150°C (TJ)
    Mounting Type Through Hole
    Moisture Sensitivity Level (MSL) 1 (Unlimited)
    Lead Free Status / RoHS Status Lead free / RoHS Compliant
    Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
    Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600V
    Detailed Description N-Channel 600V 10A (Ta) 45W (Tc) Through Hole TO-220SIS
    Current - Continuous Drain (Id) @ 25°C 10A (Ta)
  • TheTK10A60E,S4Xis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V TO220SIS and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Vgs(th) (Max) @ Id of 4V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for TK10A60E,S4X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute TK10A60E,S5X TK10A80E,S4X TK10A60W,S4VX TK10A60W,S4X
Part Number TK10A60E,S5X TK10A80E,S4X TK10A60W,S4VX TK10A60W,S4X
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
FET Feature - - - -
Series - * * *
Power Dissipation (Max) - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Detailed Description - - - -
Other Names - - - -
Moisture Sensitivity Level (MSL) - - - -
Vgs (Max) - - - -
Vgs(th) (Max) @ Id - - - -
Package / Case - - - -
Mounting Type - - - -
Operating Temperature - - - -
Packaging - - - -
FET Type - - - -
Technology - - - -
Rds On (Max) @ Id, Vgs - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - - - -
Drain to Source Voltage (Vdss) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Lead Free Status / RoHS Status - - - -
  • Toshiba Semiconductor and Storage Related Products
  • TK10A60E,S4X Download Datasheets (1)

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