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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedRN49A2,LF(CT
Toshiba Semiconductor and Storage
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RN49A2,LF(CTToshiba Semiconductor and Storage TRANS NPN/PNP PREBIAS 0.2W US6
Part NumberRN49A2,LF(CT
Package6-TSSOP, SC-88, SOT-363
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs StatusROHS3 Compliant
Manufacturer Part NumberToshiba Semiconductor and Storage-RN49A2,LF(CT
DescriptionTRANS NPN/PNP PREBIAS 0.2W US6
In stock368920
Data sheet
RN49A2,LF(CT.pdf
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  • Specifications
  • Product Details - RN49A2,LF(CT
  • RN49A2,LF(CT Tech Specifications
    Toshiba Semiconductor and Storage - RN49A2,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - RN49A2,LF(CT
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Voltage - Collector Emitter Breakdown (Max) 50V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
    Supplier Device Package US6
    Series -
    Resistor - Emitter Base (R2) 47kOhms
    Resistor - Base (R1) 47kOhms
    Power - Max 200mW
    Package / Case 6-TSSOP, SC-88, SOT-363
    Package Tape & Reel (TR)
    Mounting Type Surface Mount
    Frequency - Transition 250MHz, 200MHz
    DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
    Current - Collector Cutoff (Max) 100µA (ICBO)
    Current - Collector (Ic) (Max) 100mA
    Base Product Number RN49A2
  • TheRN49A2,LF(CTis a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is TRANS NPN/PNP PREBIAS 0.2W US6 and it falls under the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Voltage - Collector Emitter Breakdown (Max) of 50V and Vce Saturation (Max) @ Ib, Ic of 300mV @ 250µA, 5mA. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for RN49A2,LF(CT or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute RN4988FE,LF(CT RN4991FE,LF(CT RN4989FE,LXHF(CT RN4990FE,LF(CT
Part Number RN4988FE,LF(CT RN4991FE,LF(CT RN4989FE,LXHF(CT RN4990FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Current - Collector (Ic) (Max) - - - -
Base Product Number - - - -
Resistor - Emitter Base (R2) - - - -
Frequency - Transition - - - -
Package / Case - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Transistor Type - - - -
Package - Bulk Bulk Bulk
Series - * * *
Power - Max - - - -
Current - Collector Cutoff (Max) - - - -
Resistor - Base (R1) - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Supplier Device Package - - - -
Mounting Type - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
  • Toshiba Semiconductor and Storage Related Products
  • RN49A2,LF(CT Download Datasheets (1)

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