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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - Single2SK3906(Q)
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2SK3906(Q)Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO3P
Part Number2SK3906(Q)
PackageTO-3P-3, SC-65-3
ManufacturerTAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHs Status
Manufacturer Part NumberToshiba Semiconductor and Storage-2SK3906(Q)
DescriptionMOSFET N-CH 600V 20A TO3P
In stock3193
Data sheet
1.2SK3906(Q).pdf 2.2SK3906(Q).pdf
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  • Specifications
  • Product Details - 2SK3906(Q)
  • 2SK3906(Q) Tech Specifications
    Toshiba Semiconductor and Storage - 2SK3906(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - 2SK3906(Q)
    Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)
    Vgs(th) (Max) @ Id 4V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P(N)
    Series -
    Rds On (Max) @ Id, Vgs 330mOhm @ 10A, 10V
    Power Dissipation (Max) 150W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Bulk
    Operating Temperature 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4250 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 20A (Ta)
    Base Product Number 2SK3906
  • The2SK3906(Q)is a Discrete Semiconductor Products component, full developed and mass-produced by Toshiba Semiconductor and Storage manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 20A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of TAEC Product (Toshiba Electronic Devices and Storage Corporation) and Vgs(th) (Max) @ Id of 4V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Toshiba-Chip.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for 2SK3906(Q) or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute 2SK4016(Q) 2SK3798(STA4,Q,M) 2SK3868(Q,M) 2SK3670(F,M)
Part Number 2SK4016(Q) 2SK3798(STA4,Q,M) 2SK3868(Q,M) 2SK3670(F,M)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Input Capacitance (Ciss) (Max) @ Vds - - - -
Package - Bulk Bulk Bulk
Technology - - - -
Drain to Source Voltage (Vdss) - - - -
Series - * * *
Supplier Device Package - - - -
Package / Case - - - -
FET Type - - - -
Vgs(th) (Max) @ Id - - - -
Operating Temperature - - - -
Vgs (Max) - - - -
Base Product Number - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Power Dissipation (Max) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Rds On (Max) @ Id, Vgs - - - -
Mounting Type - - - -
FET Feature - - - -
  • Toshiba Semiconductor and Storage Related Products
  • 2SK3906(Q) Download Datasheets (2)

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